SEMICONDUCTOR MEMORY DEVICE

摘要

According to one embodiment, a semiconductor memory device includes a first string; a second string; and a controller. The first string is coupled with a first bit line and includes first memory cells. The second string is coupled with a second bit line and includes second memory cells. The controller executes writing first data into the first memory cells and writing second data into the second memory cells simultaneously. The controller reads data from the first and second strings after writing the first and second data.

主权项

1. A semiconductor memory device comprising:
a first string which is coupled with a first bit line, the first string including first memory cells coupled between a first selection transistor and a second selection transistor in series; a second string which is coupled with a second bit line and is adjacent to the first string, the second string including second memory cells coupled between a third selection transistor and a fourth selection transistor in series, wherein gates of the first and third selection transistors are coupled in common and gates of the second and fourth selection transistors are coupled in common; and a controller which controls access to the memory cells, wherein the controller executes writing first data into the first memory cells and writing second data into the second memory cells simultaneously, and the controller reads data from the first and second strings after writing the first and second data.