SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

摘要

There is provided a solid-state imaging device including plural pixel regions, each including a pixel having a photoelectric conversion unit, a color filter, and a microlens that condenses the incident light to the photoelectric conversion unit; a first light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each side portion of each pixel region of the plurality of the pixel regions; and a second light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each corner portion of the pixel region, in which a distance from a surface of the pixel to the first end face is short compared to the first light shielding portion.

主权项

1. A solid-state imaging device, comprising:
a semiconductor substrate; a plurality of pixels configured to be located on the semiconductor substrate, each pixel which has a photoelectric conversion unit, a color filter being located over the photoelectric conversion unit and a microlens being located over the photoelectric conversion unit; a light shielding film configured to be located between the color filters; and a film configured to be located between the color filter and the light shielding film.