| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
| 摘要 |
A semiconductor device and a method for forming the same can block a moving path of electrons between neighbor buried gates. A semiconductor device includes a device isolation film formed to define an active region over a semiconductor substrate. The semiconductor device also includes a plurality of buried gates formed over the active region, and a barrier film formed between neighboring buried gates from the plurality of buried gates. |
| 申请公布号 |
US2014367775(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201314106560 |
申请日期 |
2013.12.13 |
| 申请人 |
SK HYNIX INC. |
发明人 |
MIN Kyung Kyu |
| 分类号 |
H01L21/762;H01L29/78 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a device isolation film formed to define an active region over a semiconductor substrate; a plurality of buried gates formed over the active region; and a barrier film formed between neighboring buried gates from the plurality of buried gates. |
| 地址 |
Icheon KR |
