SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device forms a salicide layer to surround an upper surface and a circumference of a lateral surface of a pillar. A contact area between the pillar and a lower electrode may be increased to reduce a contact resistance.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a plurality of pillars formed to extend substantially perpendicular from the semiconductor substrate; a gate electrode formed to surround a circumference of a lower portion of a lateral surface of each of the pillars and to have an upper surface having a height lower than a height of an upper surface of each of the pillars; a salicide layer formed to surround the upper surface of each of the pillars and a circumference of an upper portion of the lateral surface of each of the pillars; a lower electrode formed to surround an upper surface and a lateral surface of the salicide layer; and a first spacer formed to surround a portion of the lateral surface of each of the pillars, between the upper surface of the gate electrode and the salicide layer.