| 发明名称 |
LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a work function of the second electrode. |
| 申请公布号 |
US2014367731(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201414290192 |
申请日期 |
2014.05.29 |
| 申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
YOUN Doo Hyeb;YU Young-Jun;CHUNG Kwang Hyo;CHOI Choon Gi |
| 分类号 |
H01L33/32;H01L33/42 |
主分类号 |
H01L33/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode comprising:
a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a work function of the second electrode. |
| 地址 |
Daejeon KR |
