发明名称 |
IMAGE SENSORS, METHODS, AND PIXELS WITH TRI-LEVEL BIASED TRANSFER GATES |
摘要 |
An image sensor includes at least one pixel with a transfer gate that is controllable among at least three biasing conditions, including a first biasing condition in which electrons are transferable from a photodiode to a potential well under the transfer gate, a second biasing condition in which the electrons are confined in the potential well under the transfer gate, and a third biasing condition in which the electrons are transferable out of the potential well under the transfer gate. The pixel includes a p+ type doped barrier implant located at least partially under a portion of the transfer gate, and a pinned charge transfer barrier located on the opposite side of the transfer gate from the photodiode that includes a p+ type doped region and an n-type doped region. The image sensor can operate in a global shutter mode and/or a rolling shutter mode. |
申请公布号 |
US2014367552(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201314061697 |
申请日期 |
2013.10.23 |
申请人 |
Alexander Krymski d.b.a. Alexima |
发明人 |
HYNECEK Jaroslav;Krymski Alexander |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A pixel, comprising:
a transfer gate that is controllable among a first biasing condition in which electrons are transferable from a photodiode to a potential well under the transfer gate, a second biasing condition in which the electrons are confinable in the potential well under the transfer gate, and a third biasing condition in which the electrons are transferable out of the potential well under the transfer gate. |
地址 |
Sunny Isles Beach FL US |