| 摘要 |
<p>Provided is a semiconductor device that is able to prevent deterioration in breakdown voltage caused by heat and that facilitates downsizing. A lateral semiconductor device is characterized by comprising: a semiconductor substrate; a buried oxide layer formed on the semiconductor substrate; and an active layer formed on the buried oxide layer, the active layer comprising: a second conductivity type well region surrounding a first conductivity type source region; a first conductivity type well region surrounding a first conductivity type drain region; a first conductivity type drift region interposed between the second conductivity type well region and the first conductivity type well region; and a gate electrode formed in a part of a surface of the active layer via a gate dielectric layer which has contact with a surface of the second conductivity type well region and a surface of the first conductivity type drift region, wherein the second conductivity type well region partially extends along the gate dielectric layer, longer in a direction in which carriers move than a length of the gate dielectric layer, into the first conductivity type drift region.</p> |
