发明名称 |
OPERATION TECHNIQUES OF MEMORY-STORAGE INTEGRATED SYSTEM AND NON-VOLATILE MEMORY DEVICE USING THE SAME |
摘要 |
<p>The present invention relates to a memory-storage single structure operation method and a nonvolatile memory device using the same. The device includes: a nonvolatile memory cell; and a state bit which is added to the nonvolatile memory cell and divides the cell into a dynamic allocation area and a static allocation area. The present invention divides a nonvolatile memory cell state into a dynamic allocation area state, a static allocation area state, and an empty state.</p> |
申请公布号 |
KR101473253(B1) |
申请公布日期 |
2014.12.17 |
申请号 |
KR20140009749 |
申请日期 |
2014.01.27 |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
KIM, SHIN DUG;LEE, DO HEON |
分类号 |
G06F12/00;G06F9/06 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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