发明名称 OPERATION TECHNIQUES OF MEMORY-STORAGE INTEGRATED SYSTEM AND NON-VOLATILE MEMORY DEVICE USING THE SAME
摘要 <p>The present invention relates to a memory-storage single structure operation method and a nonvolatile memory device using the same. The device includes: a nonvolatile memory cell; and a state bit which is added to the nonvolatile memory cell and divides the cell into a dynamic allocation area and a static allocation area. The present invention divides a nonvolatile memory cell state into a dynamic allocation area state, a static allocation area state, and an empty state.</p>
申请公布号 KR101473253(B1) 申请公布日期 2014.12.17
申请号 KR20140009749 申请日期 2014.01.27
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 KIM, SHIN DUG;LEE, DO HEON
分类号 G06F12/00;G06F9/06 主分类号 G06F12/00
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