| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method to prevent failures associated with miniaturization of semiconductor devices. SOLUTION: A semiconductor device 1 comprises: a gate electrode 12 formed on a silicon substrate 10 via a gate insulating film 11; a source/drain region 13 formed on the silicon substrate 10 on the both sides of the gate electrode 12; an extension region 14 formed in a portion of the silicon substrate 10 on the side of the gate electrode 12 in the source/drain region 13; and an impurity diffusion suppression region 16 formed shallower than the extension region 14 and formed across the extension region 14 and the source/drain region 13 on the silicon substrate 10 for suppressing diffusion of impurity elements included in the source/drain region 13 and the extension region 14. COPYRIGHT: (C)2012,JPO&INPIT |
