| 摘要 |
An assembly including an insulated gate bipolar transistor (IGBT) is provided. The IGBT is coupled with a gate driver (102) for receiving a gating signal (Gl) to drive the IGBT and providing a feedback signal (FB1) of the IGBT which indicates a change of a collector-emitter voltage of the IGBT. The assembly further includes a failure mode detection unit (104) for determining whether the IGBT is faulted based on a timing sequence of the gating signal (G1) and feedback signal (FB1). The failure mode detection unit (104) is capable of differentiating fault types including a gate driver fault, a failed turn-on fault, a short-circuit fault, a turn-on over-voltage fault and a turn-off over-voltage fault. Accordingly, an IGBT failure mode detection method is also provided. |
