| 发明名称 |
SEMICONDUCTOR COMPONENTS WITH STEEP PHOSPHORUS PROFILE IN A GERMANIUM LAYER |
| 摘要 |
The invention relates to a semiconductor component and to a method for limiting a dopant diffusion, in particular a phosphorus diffusion in germanium. According to the invention, an Si spike is used for this purpose. |
| 申请公布号 |
EP2812921(A2) |
申请公布日期 |
2014.12.17 |
| 申请号 |
EP20130709153 |
申请日期 |
2013.02.11 |
| 申请人 |
IHP GMBH-INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK |
发明人 |
YAMAMOTO, YUJI;TILLACK, BERND |
| 分类号 |
H01L29/36;H01L21/22;H01L21/329;H01L29/165;H01L29/167;H01L29/864;H01L31/0288;H01L31/101;H01L31/18;H01L33/00;H01L33/02;H01L33/34;H01S5/183;H01S5/30 |
主分类号 |
H01L29/36 |
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