| 摘要 |
A nitride-based semiconductor light-emitting device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane; and an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region, wherein the Ag electrode has a thickness in a range of not less than 200 nm and not more than 1,000 nm; an integral intensity ratio of an X-ray intensity of a (111) plane on the growing plane of the Ag electrode to that of a (200) plane is in a range of not less than 20 and not more than 100; and the Ag electrode has a reflectance of not less than 70%. |
