| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve such a problem that sulfuric acid cadmium (CdSO<SB POS="POST">4</SB>), a slight amount of sulfur, carbonyl sulfide or the like are included as impurities in a CdS film, so that white irregularities (an aggregate of particles of Cd and S on a surface layer) may be caused, and the white irregularities are also caused in sulfide of Zn and In in addition to Cd, and causes reflection due to a difference of an optical constant with a buffer layer, so that a transmittance may be decreased. <P>SOLUTION: A photoelectric conversion element includes: a light absorption layer including a compound semiconductor capable of performing photoelectric conversion; and a semiconductor layer provided on one side of the light absorption layer and including an element group A (the element group A includes at least one selected from among Cd, Zn and In) and S. An average composition of the element group A on a surface on the opposite side to the light absorption layer in the semiconductor layer is relatively small relative to the entire semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
