| 摘要 |
<p>To provide a semiconductor device wherein stability in a bonded portion is ensured over a long period of time even in cases where a semiconductor element is operated at high temperatures. A method for manufacturing a semiconductor device, which comprises: a step wherein a solution is prepared by dissolving a polymer reagent having a reducing functional group in an organic solvent; a step wherein an insulating substrate, both surfaces of which are provided with metal layers, is immersed into the solution; a step wherein a semiconductor chip, one surface of which is provided with a metal layer, is immersed into the solution; and a step wherein the insulating substrate after the immersion step and the semiconductor chip after the immersion step are brought into contact with each other and heated under pressure, thereby forming an assembly of the insulating substrate and the semiconductor chip.</p> |
