| 摘要 |
In one embodiment, electron-beam or ion-beam induced etching of a work piece at a temperature below room temperature in a precursor gas is disclosed. The beam-induced etching may use a work piece maintained at a temperature near the boiling point of a precursor material, e.g. NF 3 , but the temperature is sufficiently high to desorb reaction byproducts. In another embodiment, NF 3 is used for generating a ionization cascade to amplify the number of secondary electrons for detection in a charged particle beam system for processing a work piece. |
