| 摘要 |
One oxide film of the present invention is a film of an oxide (which can contain incidental impurities) containing one transition element selected from the group consisting of niobium (Nb) and tantalum (Ta) and copper (Cu). The oxide film is an aggregate of microcrystals, an amorphous form including microcrystals or an amorphous form, which shows no clear diffraction peak in an XRD analysis and has p-type conductivity as shown in the chart of FIG. 5 showing the results of XRD (X-ray diffraction) analyses of a first oxide film and a second oxide film. According to this oxide film, p-type conductivity higher than that of a conventional oxide film is obtained. This oxide film is an aggregate of microcrystals, an amorphous form containing microcrystals or an amorphous form, is consequently easily formed on a large substrate, and is therefore suitable also for industrial production. |
