| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element with higher reliability that has excellent characteristics of adhesion, heat dissipation, light emission efficiency and/or ripple reduction etc., by securing an optimal material as a protective film to be arranged on the side surface of a nitride semiconductor layer and arranging it, and to provide a method of manufacturing the same. <P>SOLUTION: The nitride semiconductor element includes a substrate 10, the nitride semiconductor layer laminated on the substrate 10, a first protective film 17 arranged at the upper part of the nitride semiconductor layer and including Si and C, and an electrode 19 coming into contact with the first protective film 17 and electrically connected with the nitride semiconductor layer. The first protective film 17 has, on an interface with the electrode 19, a mixture layer 18 in which at least part of elements constituting the electrode 19 and at least part of elements constituting the first protective film 17 are mixed. <P>COPYRIGHT: (C)2011,JPO&INPIT |
