| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a microstructure of a nitride semiconductor capable of forming the microstructure including a vacancy inside the semiconductor without greatly changing the size of a hole formed by precise control in an etching step of the semiconductor after performing a heat treatment process. SOLUTION: A method of manufacturing a microstructure of a nitride semiconductor, in which a second semiconductor layer 104 consisting of a group III nitride semiconductor containing Al is formed on a major surface of a first semiconductor layer 102 consisting of a group III nitride semiconductor except for Al, includes: a first step of preparing a semiconductor structure having a pore 107 that is formed on the first semiconductor layer and penetrates the second semiconductor layer; a second step of carrying out a heat treatment of the semiconductor structure under an atmosphere containing a nitrogen element after the first step to form a crystal surface of the first semiconductor layer on at least a part of a sidewall of the pore formed on the first semiconductor layer; and a third step of forming a third semiconductor layer 111 consisting of the group III nitride semiconductor on the second semiconductor layer after the second step to cover an upper part of the pore. COPYRIGHT: (C)2012,JPO&INPIT |
