| 发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE TREATMENT SYSTEM |
| 摘要 |
A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more. |
| 申请公布号 |
KR20140143763(A) |
申请公布日期 |
2014.12.17 |
| 申请号 |
KR20147026948 |
申请日期 |
2013.03.26 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
AKIYAMA KOJI;HIGASHIJIMA HIROKAZU;TAMURA CHIHIRO;AOYAMA SHINTARO;WAMURA YU |
| 分类号 |
H01L21/336;C23C16/40;C23C16/56;H01L21/283;H01L21/31;H01L21/316;H01L21/318;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/336 |
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