| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which the size of a trench formed in an insulating film is easily controlled. SOLUTION: The method of manufacturing the semiconductor device includes the processes of: forming a hard mask by etching a silicon oxide film of an object to be etched, which has a lower insulating film having a dual-damascene via formed, a resin film filling the via, extended on the lower insulating film, and made of resist material, the silicon oxide film formed on the resin film, and a resist pattern formed over the silicon oxide film, through the resist pattern as a mask in accordance with a recipe selected from a recipe group, stored in a controller of an etching chamber, including a plurality of recipes each determining a consumption of a gas selected out of C<SB>4</SB>F<SB>6</SB>, CHF<SB>3</SB>, C<SB>4</SB>F<SB>8</SB>, and CH<SB>3</SB>F and a consumption of a gas selected out of O<SB>2</SB>and Ar; and forming a dual damascene trench by etching the resin film and the lower insulating film using the hard mask. COPYRIGHT: (C)2011,JPO&INPIT |
