发明名称 |
WORD LINE VOLTAGE CONTROL IN STT-MRAM |
摘要 |
<p>Systems, circuits and methods for controlling the word line voltage applied to word line transistors in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. One embodiment is directed to a STT-MRAM including a bit cell having a magnetic tunnel junction (MTJ) and a word line transistor. The bit cell is coupled to a bit line and a source line. A word line driver is coupled to a gate of the word line transistor. The word line driver is configured to provide a word line voltage greater than a supply voltage below a transition voltage of the supply voltage and to provide a voltage less than the supply voltage for supply voltages above the transition voltage.</p> |
申请公布号 |
EP2353164(B1) |
申请公布日期 |
2014.12.17 |
申请号 |
EP20090748663 |
申请日期 |
2009.11.04 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
YOON, SEI SEUNG;SANI, MEHDI HAMIDI;KANG, SEUNG H. |
分类号 |
G11C11/16;G11C8/08 |
主分类号 |
G11C11/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|