Semiconductor-on-insulator device with asymmetric structure

摘要

Device structures with a reduced junction area in an SOI process, methods of making the device structures, and design structures for a lateral diode. The device structure includes one or more dielectric regions, such as STI regions, positioned in the device region and intersecting the p-n junction between an anode and cathode. The dielectric regions, which may be formed using shallow trench isolation techniques, function to reduce the width of a p-n junction with respect to the width area of the cathode at a location spaced laterally from the p-n junction and the anode. The width difference and presence of the dielectric regions creates an asymmetrical diode structure. The volume of the device region occupied by the dielectric regions is minimized to preserve the volume of the cathode and anode.

主权项

1. A device structure fabricated in a semiconductor layer of a semiconductor-on-insulator (SOI) substrate, the device structure comprising:
a cathode including a first region of the semiconductor layer doped with a first conductivity type and a first width in the semiconductor layer; an anode including a first region of a second conductivity type in the semiconductor layer, the anode arranged relative to the cathode so that the first region of the anode is coextensive with the first region of the cathode along a p-n junction; and at least one dielectric region in the semiconductor layer, the at least one dielectric layer partitioning the p-n junction into a plurality of sections of individual widths that aggregately have a second width measured in a direction parallel to the first width and shorter than the first width of the first region measured at a location spaced laterally from the p-n junction.