Semiconductor device having blocking pattern and method for fabricating the same

摘要

A method for fabricating a semiconductor device is provided. The method includes forming a gate pattern which intersects a fin-type active pattern protruding upward from a device isolation layer. A first blocking pattern is formed on a portion of the fin-type active pattern, which does not overlap the gate pattern. Side surfaces of the portion of the fin-type active pattern are exposed. A semiconductor pattern is formed on the exposed side surfaces of the portion of the fin-type active pattern after the forming of the first blocking pattern.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming a dummy gate pattern intersecting a fin-type active pattern protruding upward from a device isolation layer; forming a first blocking pattern on at least a portion of the fin-type active pattern, wherein the first blocking pattern does not overlap the dummy gate pattern and exposes side surfaces of the portion of the fin-type active pattern; forming a semiconductor pattern on the exposed side surfaces of the portion of the fin-type active pattern after forming the first blocking pattern; forming an insulating layer which covers the dummy gate pattern and the fin-type active pattern after forming the dummy gate pattern and before forming the first blocking pattern; and forming a spacer on side surfaces of the dummy gate pattern by etching the insulating layer.