| 发明名称 | Method for producing a metal layer on a substrate and device | ||
| 摘要 | A method produces a metal layer on a semiconductor substrate. A metal layer is produced on the semiconductor substrate by depositing metal particles. The metal particles include cores made of a first metal material and shells surrounding the cores. The shells are made of a second metal material that is resistant to oxidation. | ||
| 申请公布号 | US8912047(B2) | 申请公布日期 | 2014.12.16 |
| 申请号 | US201113110653 | 申请日期 | 2011.05.18 |
| 申请人 | Infineon Technologies AG | 发明人 | Hosseini Khalil;Schulze Hans-Joachim |
| 分类号 | H01L21/50;C23C4/00;C23C4/12;H01L21/768;C23C4/08;H01L23/00 | 主分类号 | H01L21/50 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method for producing a semiconductor device, the method comprising: providing a semiconductor substrate having a first surface; and forming a first metal layer on the first surface of the semiconductor substrate by plasma depositing metal particles on the first surface of the semiconductor substrate, wherein the metal particles comprise cores comprising a first metal material and shells surrounding the cores, wherein the shells comprise a second metal material that is resistant to oxidation and wherein the metal particles are larger than 300 nm. | ||
| 地址 | Neubiberg DE | ||