发明名称 Programming non-volatile storage system with multiple memory die
摘要 A system and methods for programming a set of data onto non-volatile memory elements, maintaining copies of the data pages to be programmed, as well as surrounding data pages, internally or externally to the memory circuit, verifying programming correctness after programming, and upon discovering programming error, recovering the safe copies of the corrupted data to be reprogrammed in alternative non-volatile memory elements. Additionally, a system and methods for programming one or more sets of data across multiple die of a non-volatile memory system, combining data pages across the multiple die by means such as the XOR operation prior to programming the one or more sets of data, employing various methods to determine the correctness of programming, and upon identifying data corruption, recovering safe copies of data pages by means such as XOR operation to reprogram the pages in an alternate location on the non-volatile memory system.
申请公布号 US8913428(B2) 申请公布日期 2014.12.16
申请号 US201313749968 申请日期 2013.01.25
申请人 SanDisk Technologies Inc. 发明人 Li Yan
分类号 G11C11/34;G11C11/56;G11C16/34;G11C16/10 主分类号 G11C11/34
代理机构 Vierra Magen Marcus LLP 代理人 Vierra Magen Marcus LLP
主权项 1. A process for programming non-volatile storage, comprising: programming multiple sets of data to targeted non-volatile storage elements in different memory die of a plurality of memory dies; and for each set of data: obtaining a copy of nearby data already stored near and in a same die as respective targeted non-volatile storage elements prior to said programming and combining the obtained copy of the nearby data with copies of data from other memory die to create a combined copy, if the respective set of data does not program properly during said programming then recovering at least a portion of the nearby data from the combined copy and storing the recovered nearby data at a new location in the plurality of memory dies.
地址 Plano TX US