Non-volatile semiconductor memory device

摘要

First conductive layers extend in a first direction horizontal to a substrate as a longitudinal direction, and are stacked in a direction perpendicular to a substrate. An interlayer insulating layer is provided between the first conductive layers. The variable resistance layers functioning as a variable resistance element are formed continuously on the side surfaces of the first conductive layers and the interlayer insulating layer. A columnar conductive layer is provided on the side surfaces of the first conductive layers and the interlayer insulating layer via the variable resistance layers. First side surfaces of the first conductive layers are recessed from a second side surface of the interlayer insulating layer in the direction away from the columnar conductive layers.

主权项

1. A semiconductor memory device comprising a memory cell array, the memory cell array comprising a plurality of first wiring lines, a plurality of second wiring lines, the first and second wiring lines crossing each other, and a plurality of memory cells, the memory cells being disposed in crossing portions of the first and second wiring lines, each memory cell comprising a variable resistance element,
the memory cell array comprising: a plurality of first conductive layers, the first conductive layers extending in a first direction horizontal to a substrate as a longitudinal direction, and the first conductive layers being stacked in a direction perpendicular to the substrate; an interlayer insulating layer provided between the first conductive layers; a variable resistance layer formed continuously on side surfaces of the first conductive layers and the interlayer insulating layer; and a columnar conductive layer provided on side surfaces of the first conductive layers and the interlayer insulating layer via the variable resistance layer, the columnar conductive layer extending in a direction perpendicular to the substrate as a longitudinal direction, first side surfaces of the first conductive layers being recessed from a second side surface of the interlayer insulating layer in a direction away from the columnar conductive layer, the variable resistance layer being formed continuously on the first and second side surfaces, each variable resistance layer having a convex shape on the second side surface.