发明名称 |
Method of manufacturing a film bulk acoustic resonator with a loading element |
摘要 |
Manufacturing a semiconductor structure including modifying a frequency of a Film Bulk Acoustic Resonator (FBAR) device though a vent hole of a sealing layer surrounding the FBAR device. |
申请公布号 |
US8910355(B2) |
申请公布日期 |
2014.12.16 |
申请号 |
US201113323285 |
申请日期 |
2011.12.12 |
申请人 |
International Business Machines Corporation |
发明人 |
Adkisson James W.;Candra Panglijen;Dunbar Thomas J.;Gambino Jeffrey P.;Jaffe Mark D.;Stamper Anthony K.;Wolf Randy L. |
分类号 |
H03H3/04;H03H9/15;H03H9/10;H03H3/02;H03H3/007;C23C16/40 |
主分类号 |
H03H3/04 |
代理机构 |
Roberts Mlotkowski Safran & Cole, P.C. |
代理人 |
Canale Anthony;Roberts Mlotkowski Safran & Cole, P.C. |
主权项 |
1. A method of manufacturing a semiconductor structure, comprising:
forming a bottom electrode of a Film Bulk Acoustic Resonator (FBAR) device on a first sacrificial material and an insulator layer; forming a piezoelectric material on the bottom electrode; forming a top electrode of the FBAR device on the piezoelectric material; forming a loading element on the top electrode; forming a second sacrificial material on and surrounding the FBAR device; forming a sealing layer on the insulator layer and the second sacrificial material; forming a vent hole in the sealing layer; selectively removing the first sacrificial material and the second sacrificial material using an etch process through the vent hole, without removing the loading element; and modifying a frequency of the FBAR device through the vent hole of the sealing layer surrounding the FBAR device, wherein the modifying a frequency is performed after the forming the sealing layer and after the selectively removing the first sacrificial material and the second sacrificial material. |
地址 |
Armonk NY US |