Hybrid laser and plasma etch wafer dicing using substrate carrier

摘要

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier.

主权项

1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits, and the semiconductor wafer supported by a substrate carrier; patterning the mask with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits; and, subsequently, covering a portion of the substrate carrier with a protective plate, the protective plate leaving exposed at least a portion of the semiconductor wafer; and, subsequently, etching, while supported by the substrate carrier, the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.