Semiconductor device with strained channel and method of fabricating the same

摘要

A semiconductor device includes: a gate pattern over a substrate; recess patterns provided in the substrate at both sides of the gate pattern, each having a side surface extending below the gate pattern; and a source and a drain filling the recess patterns, and forming a strained channel under the gate pattern.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming a gate pattern over a substrate; etching the substrate at both sides of the gate pattern to form recess patterns each having a side surface extending below the gate pattern; forming a source and a drain by respectively filling the recess patterns using epitaxial growth; and forming a protection layer over a surface of the recess pattern through an epitaxial growth before forming the source and the drain, wherein the protection layer comprises a material having a lattice constant equal to that of the substrate.