Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby

摘要

Disclosed are methods for forming hybrid metal-oxide-semiconductor field effect transistors (MOSFETs) and the hybrid MOSFETS thus obtained. In one embodiment, a method is disclosed that includes providing a first substrate comprising a first region and a second region, providing a second substrate comprising a second semiconductor layer and an insulating layer overlaying the second semiconductor layer, and direct substrate bonding the second substrate to the first substrate, thereby contacting the first region and the second region with the insulating layer. The method further includes selectively removing the second semiconductor layer and the insulating layer in the first region, thereby exposing the first semiconductor layer in the first region, forming a first gate stack of a first MOSFET on the exposed first semiconductor layer in the first region, and forming a second gate stack of a second MOSFET on the second semiconductor layer in the second region.

主权项

1. A method comprising:
providing a first substrate comprising:
a first region, wherein the first region comprises a first semiconductor layer of a group IV semiconductor material, anda second region; providing a second substrate comprising a second semiconductor layer of a III-V semiconductor material and an insulating layer overlaying the second semiconductor layer; direct substrate bonding the second substrate to the first substrate, thereby contacting the first region and the second region with the insulating layer; selectively removing the second semiconductor layer and the insulating layer above the first region, thereby exposing the first semiconductor layer in the first region; forming on the exposed first semiconductor layer a first gate stack corresponding to a first metal-oxide-semiconductor field effect transistor (MOSFET); and forming above the second region and on the second semiconductor layer a second gate stack corresponding to a second MOSFET.