发明名称 Dicing-free LED fabrication
摘要 Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a substrate having opposite first and second sides. A semiconductor layer is formed on the first side of the substrate. The method includes forming a photoresist layer over the semiconductor layer. The method includes patterning the photoresist layer into a plurality of photoresist components. The photoresist components are separated by openings. The method includes filling the openings with a plurality of thermally conductive components. The method includes separating the semiconductor layer into a plurality of dies using a radiation process that is performed to the substrate from the second side. Each of the first regions of the substrate is aligned with one of the conductive components.
申请公布号 US8912033(B2) 申请公布日期 2014.12.16
申请号 US201012900663 申请日期 2010.10.08
申请人 TSMC Solid State Lighting Ltd. 发明人 Hsia Hsing-Kuo;Yu Chih-Kuang;Kuo Gordon
分类号 H01L21/00;H01L33/00 主分类号 H01L21/00
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A method, comprising: providing a substrate having opposite first and second sides, wherein the first side has a semiconductor layer formed thereon; forming a photoresist layer over the semiconductor layer such that an entire portion of a bottom surface of the photoresist layer is formed on a top surface of the semiconductor layer; patterning the photoresist layer into a plurality of photoresist components, the photoresist components being separated by openings; filling the openings with a plurality of conductive components; and separating the semiconductor layer into a plurality of dies using a radiation process that includes selectively radiating a plurality of first regions of the substrate from the second side, each of the first regions of the substrate being aligned with a respective one of the conductive components.
地址 Hsin-Chu TW