Light-emitting display device and method for manufacturing the same

摘要

Provided is a method to manufacture a light-emitting display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.

主权项

1. A light-emitting display device comprising a pixel over a flexible substrate, the pixel comprising:
a first transistor comprising:
a first oxide semiconductor layer; anda first source electrode and a first drain electrode which are electrically connected to the first oxide semiconductor layer; a second transistor comprising:
a gate electrode;a gate insulating layer in direct contact with the gate electrode; anda second source electrode and a second drain electrode with a second oxide semiconductor layer between the gate insulating layer and the second source electrode and between the gate insulating layer and the second drain electrode, wherein the second source electrode and the second drain electrode are electrically connected to the second oxide semiconductor layer; and a light-emitting element comprising:
a first electrode electrically connected to one of the second source electrode and the second drain electrode;a partition wall over the first electrode;an organic compound layer over the first electrode and the partition wall; anda second electrode over the organic compound layer, wherein the gate electrode is electrically connected to one of the first source electrode and the first drain electrode, and wherein the partition wall is in direct contact with the gate insulating layer.