METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GAN, INN, AND AIN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION

摘要

Methods for the heteroepitaxial growth of smooth, high quality films of N- face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (µm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.