Solid-state image sensor and image sensing apparatus

摘要

In an image sensor including a first column readout line and a second column readout line provided to each pixel column, a plurality of pixel rows are divided into pixel rows of a first group and pixel rows of a second group, pixels of the pixel rows of the first group output signals to the first column readout line, and pixels of the pixel rows of the second group output signals to the second column readout line. A shortest distance between a conversion region of a first pixel of a pixel row of the first group and the first column readout line to which a signal from the first pixel is output is not more than a shortest distance between the conversion region of the first pixel and the second column readout line to which signals from the pixels belonging to the pixel rows of the second group are output.

主权项

1. A solid-state image sensor which includes a pixel array in which a plurality of pixels are two-dimensionally arranged so as to form a plurality of pixel rows and a plurality of pixel columns, and a first column readout line and a second column readout line provided to each pixel column, wherein
the plurality of pixel rows which form the pixel array are divided into a first group consisting of odd-numbered pixel rows and a second group consisting of even-numbered pixel rows, the first group being divided into a plurality of first subgroups, and the second group being divided into a plurality of second subgroups, each pixel includes a photoelectric conversion element and a transfer element, a plurality of pixels belonging to an identical subgroup consisting of odd-numbered pixel rows and an identical pixel column share a conversion region and an amplification element, and a plurality of pixels belonging to an identical subgroup consisting of even-numbered pixel rows and an identical pixel column share a conversion region and an amplification element, wherein charges generated in the photoelectric conversion elements are transferred to the conversion region by the transfer elements, the transferred charges are converted into a voltage in the conversion region, and a signal in accordance with the converted voltage is output by the amplification element, the conversion region includes a portion arranged between the photoelectric conversion elements of adjacent pixels arranged in each adjacent pixel row of a column, signals from pixels belonging to the pixel rows of the first group are output to the first column readout line, and signals from pixels belonging to the pixel rows of the second group are output to the second column readout line, the plurality of pixel columns includes a first pixel column and a second pixel column which is arranged adjacent to the first pixel column, a shortest distance between the conversion region of each subgroup in the first group and the first column readout line to which signals from pixels of the subgroup are output is not more than a shortest distance between the conversion region of the subgroup and the second column readout line to which signals from the second group are output, and a shortest distance between the conversion region of each subgroup in the second group and the second column readout line to which signals from pixels of the subgroup is not more than a shortest distance between the conversion region of the subgroup and the first column readout line to which signals from the first group are output, and the first column readout line to which signals of the first group pixels of the first pixel column are output and the second column readout line to which signals of the second group pixels of the second pixel column are output are arranged between the photoelectric conversion elements of the first group pixels of the first pixel column and the photoelectric conversion elements of the second group pixels of the second pixel column.