Lateral double-diffused high voltage device

摘要

A method of forming a device is disclosed. The method includes providing a substrate with a device region. The method also includes forming a transistor in the device region. The transistor includes a gate having first and second sides along a gate direction. The transistor also includes a first doped region adjacent to a first side of the gate, a second doped region adjacent to a second side of the gate, and a channel under the gate. The transistor further includes a channel trench in the channel of the gate, wherein the channel trench is along a trench direction which is at an angle θ other than 90° with respect to the gate direction.

主权项

1. A method of forming a device comprising:
providing a substrate with a device region; and forming a transistor in the device region, wherein the transistor includes
a gate trench,a gate disposed on the substrate and fills the gate trench, the gate having first and second sides along a gate direction,a first doped region adjacent to a first side of the gate,a second doped region adjacent to a second side of the gate,a channel under the gate,wherein the channel is along a gate trench direction which is at an angle θ other than 90° with respect to the gate direction, andan internal device isolation region along the trench direction in the substrate between the gate and the second doped region.