| 发明名称 | Display device and method of manufacturing the same | ||
| 摘要 | A display device according to an exemplary embodiment of the present invention includes a semiconductor layer; a data line disposed on the semiconductor layer, and a source electrode as well as a drain electrode disposed on the semiconductor layer and facing the source electrode. The semiconductor layer is made of an oxide semiconductor including indium, tin, and zinc. An atomic percent of indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, and the data line and the drain electrode comprise copper. | ||
| 申请公布号 | US8912027(B2) | 申请公布日期 | 2014.12.16 |
| 申请号 | US201313733820 | 申请日期 | 2013.01.03 |
| 申请人 | Samsung Display Co., Ltd | 发明人 | Ahn Byung Du;Lee Kyoung Won;Kim Gun Hee;Choi Young Joo |
| 分类号 | H01L33/44;H01L29/786;H01L27/12 | 主分类号 | H01L33/44 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A display device comprising: a first substrate; a gate line disposed on the first substrate and including a gate electrode; a gate insulating layer disposed on the gate line; a semiconductor layer disposed on the gate insulating layer; a data line disposed on the semiconductor layer and including a source electrode; a drain electrode disposed on the semiconductor layer and facing the source electrode; and a passivation layer disposed on the data line and the drain electrode, wherein the semiconductor layer comprises an oxide semiconductor including indium, tin, and zinc, wherein an atomic percent of the indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of the zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of the tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, wherein a minimum etch selective ratio between the oxide semiconductor, and the data line and the drain electrode satisfies: −0.22+0.002×T, where T denotes a thickness of the data line and the drain electrode, and wherein the data line and the drain electrode comprise copper. | ||
| 地址 | KR | ||