发明名称 |
Read distribution management for phase change memory |
摘要 |
Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory. |
申请公布号 |
US8913426(B2) |
申请公布日期 |
2014.12.16 |
申请号 |
US201313913714 |
申请日期 |
2013.06.10 |
申请人 |
Micron Technology, Inc. |
发明人 |
Bedeschi Ferdinando;Gastaldi Roberto |
分类号 |
G11C11/00;G11C13/00;G11C11/56 |
主分类号 |
G11C11/00 |
代理机构 |
Knobbe, Martens, Olson & Bear, LLP |
代理人 |
Knobbe, Martens, Olson & Bear, LLP |
主权项 |
1. A method of reading a memory cell in a memory array, comprising:
providing a reference cell current delta for each of a plurality of current steps corresponding to a memory state of the memory cell, wherein the reference cell current delta is determined by comparing a current of a reference cell in the memory array at a point in time to a current of the reference cell at an earlier point in time; and determining the state of the memory cell based at least in part on a comparison between a memory cell current of the memory cell and a read reference current, the comparison being adjusted by the reference cell current delta associated with an applied current step. |
地址 |
Boise ID US |