发明名称 Read distribution management for phase change memory
摘要 Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory.
申请公布号 US8913426(B2) 申请公布日期 2014.12.16
申请号 US201313913714 申请日期 2013.06.10
申请人 Micron Technology, Inc. 发明人 Bedeschi Ferdinando;Gastaldi Roberto
分类号 G11C11/00;G11C13/00;G11C11/56 主分类号 G11C11/00
代理机构 Knobbe, Martens, Olson & Bear, LLP 代理人 Knobbe, Martens, Olson & Bear, LLP
主权项 1. A method of reading a memory cell in a memory array, comprising: providing a reference cell current delta for each of a plurality of current steps corresponding to a memory state of the memory cell, wherein the reference cell current delta is determined by comparing a current of a reference cell in the memory array at a point in time to a current of the reference cell at an earlier point in time; and determining the state of the memory cell based at least in part on a comparison between a memory cell current of the memory cell and a read reference current, the comparison being adjusted by the reference cell current delta associated with an applied current step.
地址 Boise ID US