发明名称 Method of fabricating semiconductor device including a substrate attached to a carrier
摘要 A method of fabricating a semiconductor device includes attaching a semiconductor substrate to a carrier using a carrier fixing layer, where the semiconductor substrate including a plurality of semiconductor chips. The method further includes forming gaps between adjacent ones of the chips. The gaps may be formed using one or more chemicals or light which act to remove portions of the semiconductor substrate to expose the carrier fixing layer. Additional portions of the carrier fixing layer are then removed to allow for removal of the chips from the carrier.
申请公布号 US8912048(B2) 申请公布日期 2014.12.16
申请号 US201313803662 申请日期 2013.03.14
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Jong-Youn;Kim Ji-Hwang;Yu Hae-Jung;Jo Cha-Jea
分类号 H01L21/00;H01L21/82 主分类号 H01L21/00
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A method of fabricating a semiconductor device comprising: attaching a semiconductor substrate to a carrier using a carrier fixing layer, the semiconductor substrate including a plurality of first semiconductor chips; forming gaps between adjacent ones of the plurality of first semiconductor chips; filling the gaps with one or more chemicals to remove portions of the carrier fixing layer exposed in respective ones of the gaps; and electrically connecting a plurality of second semiconductor chips to respective ones of the plurality of first semiconductor chips, wherein the electrically connecting is performed between the attaching of the semiconductor substrate to the carrier and the forming of the gaps.
地址 Gyeonggi-do KR