GENERATING A NON-REVERSIBLE STATE AT A BITCELL HAVING A FIRST MAGNETIC TUNNEL JUNCTION AND A SECOND MAGNETIC TUNNEL JUNCTION
摘要
A method of generating a non - reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.
申请公布号
CA2807392(C)
申请公布日期
2014.12.16
申请号
CA20112807392
申请日期
2011.08.03
申请人
QUALCOMM INCORPORATED
发明人
RAO, HARI M.;KIM, JUNG PILL;KANG, SEUNG H.;ZHU, XIAOCHUN;KIM, TAE HYUN;LEE, KANGHO;LI, XIA;HSU, WAH NAM;HAO, WUYANG;SUH, JUNGWON;YU, NICHOLAS K.;NOWAK, MATTHEW MICHAEL;MILLENDORF, STEVEN M.;ASHKENAZI, ASAF