Pseudo block operation mode in 3D NAND

摘要

A 3D NAND stacked non-volatile memory device, comprising: a string comprising a plurality of non-volatile storage elements, the string comprises a channel and extends vertically through layers of the 3D stacked non-volatile memory device, and the plurality of storage elements are subdivided into different groups based on group assignments, each group of the different groups comprises multiple adjacent storage elements of the plurality of storage elements; and a control circuit in communication with the string, the control circuit, to perform a Pseudo Block Operation Mode.

主权项

1. A three-dimensional stacked non-volatile memory device, comprising:
a substrate; a plurality of sets of memory cells above the substrate in multiple physical levels, each set of memory cells comprising an active area comprising a channel that extends vertically through the physical levels, the sets of memory cells are associated with pseudo blocks, each pseudo block comprises a portion of each of the sets of memory cells, each of the sets of memory cells is a member of each of the pseudo blocks, wherein each of the memory cells is characterized by a memory hole size, the memory cells are associated with pseudo blocks based on memory hole size; and circuitry associated with operation of the plurality of sets of memory cells, the circuitry is in communication with the plurality of sets of memory cells, the circuitry operates in a pseudo block operation mode that performs operations associated with the plurality of sets of memory cells on a pseudo block level for the three-dimensional stacked non-volatile memory device.