| 发明名称 |
TFT structure and LCD device |
| 摘要 |
A thin film transistor (TFT) structure includes a first metal layer. The first metal layer is configured with an insulating layer, a second metal layer covers a surface of the insulating layer, an area of the second metal layer that corresponds to an area above the first metal layer is configured with a gap. An area of the insulating layer that corresponds to the gap is configured with a groove. An active layer made of an indium gallium zinc oxide (IGZO) covers surfaces of the second metal layer, the gap, and the groove. |
| 申请公布号 |
US8912542(B2) |
申请公布日期 |
2014.12.16 |
| 申请号 |
US201313824341 |
申请日期 |
2013.02.27 |
| 申请人 |
|
发明人 |
Tseng Chihyuan |
| 分类号 |
H01L29/78;G02F1/1368;H01L29/66;H01L29/786 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A thin film transistor (TFT) structure, comprising:
a first metal layer; wherein the first metal layer is configured with an insulating layer, a second metal layer covers a surface of the insulating layer; an area of the second metal layer that corresponds to an area above the first metal layer is configured with a gap; wherein an area of the insulating layer that corresponds to the gap is configured with a groove; wherein an active layer made of an indium gallium zinc oxide (IGZO) covers surfaces of the second metal layer, the gap, and the groove. |
| 地址 |
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