发明名称 |
Methods for precleaning a substrate prior to metal silicide fabrication process |
摘要 |
Methods for precleaning native oxides or other contaminants from a surface of a substrate prior to forming a metal silicide layer on the substrate. In one embodiment, a method for removing native oxides from a substrate includes transferring a substrate having an oxide layer disposed thereon into a processing chamber, performing a pretreatment process on the substrate by supplying a pretreatment gas mixture into the processing chamber, performing an oxide removal process on the substrate by supplying a cleaning gas mixture into the processing chamber, wherein the cleaning gas mixture includes at least an ammonium gas and a nitrogen trifluoride, and performing a post treatment process on the cleaned substrate by supplying a post treatment gas mixture into the processing chamber. |
申请公布号 |
US8912096(B2) |
申请公布日期 |
2014.12.16 |
申请号 |
US201113097016 |
申请日期 |
2011.04.28 |
申请人 |
Applied Materials, Inc. |
发明人 |
Zheng Bo;Sundarrajan Arvind;Hamkar Manish |
分类号 |
H01L21/302;H01L21/461;H01L21/285;H01L21/02;H01L21/67 |
主分类号 |
H01L21/302 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A method for removing native oxides from a substrate, comprising:
transferring a substrate having an oxide layer disposed thereon into a processing chamber; performing a multiple step cleaning process in the processing chamber to remove the oxide layer, wherein the multiple step cleaning process comprises:
performing a pretreatment process on the substrate by supplying a pretreatment gas mixture into the processing chamber to form a plasma during the pretreatment process to activate the oxide layer on the substrate;performing an oxide removal process on the substrate by supplying a cleaning gas mixture into the processing chamber, wherein the cleaning gas mixture includes at least an ammonium gas and a nitrogen trifluoride to remove the activated oxide layer from the substrate; andperforming a post treatment process on the cleaned substrate by supplying a post treatment gas mixture into the processing chamber to form a plasma during the post treatment process after removal of the oxide layer. |
地址 |
Santa Clara CA US |