发明名称 Methods for precleaning a substrate prior to metal silicide fabrication process
摘要 Methods for precleaning native oxides or other contaminants from a surface of a substrate prior to forming a metal silicide layer on the substrate. In one embodiment, a method for removing native oxides from a substrate includes transferring a substrate having an oxide layer disposed thereon into a processing chamber, performing a pretreatment process on the substrate by supplying a pretreatment gas mixture into the processing chamber, performing an oxide removal process on the substrate by supplying a cleaning gas mixture into the processing chamber, wherein the cleaning gas mixture includes at least an ammonium gas and a nitrogen trifluoride, and performing a post treatment process on the cleaned substrate by supplying a post treatment gas mixture into the processing chamber.
申请公布号 US8912096(B2) 申请公布日期 2014.12.16
申请号 US201113097016 申请日期 2011.04.28
申请人 Applied Materials, Inc. 发明人 Zheng Bo;Sundarrajan Arvind;Hamkar Manish
分类号 H01L21/302;H01L21/461;H01L21/285;H01L21/02;H01L21/67 主分类号 H01L21/302
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. A method for removing native oxides from a substrate, comprising: transferring a substrate having an oxide layer disposed thereon into a processing chamber; performing a multiple step cleaning process in the processing chamber to remove the oxide layer, wherein the multiple step cleaning process comprises: performing a pretreatment process on the substrate by supplying a pretreatment gas mixture into the processing chamber to form a plasma during the pretreatment process to activate the oxide layer on the substrate;performing an oxide removal process on the substrate by supplying a cleaning gas mixture into the processing chamber, wherein the cleaning gas mixture includes at least an ammonium gas and a nitrogen trifluoride to remove the activated oxide layer from the substrate; andperforming a post treatment process on the cleaned substrate by supplying a post treatment gas mixture into the processing chamber to form a plasma during the post treatment process after removal of the oxide layer.
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