发明名称 PIEZOELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film made of scandium aluminum nitride, which is capable of reliably exhibiting excellent piezoelectric characteristics, and a method for producing the piezoelectric thin film.SOLUTION: A piezoelectric thin film 1 is obtained by sputtering and made of scandium aluminum nitride, and has a percentage content of carbon atoms of 2.5 at% or less. In producing the piezoelectric thin film 1, scandium and aluminum are simultaneously sputtered on a substrate from a scandium aluminum alloy target material having a percentage content of carbon atoms of 5 at% or less, in an atmosphere containing at least nitrogen gas. Or, sputtering may be also performed by obliquely irradiating a surface facing the alloy target material with ion beams. Alternatively, scandium and aluminum may be also simultaneously sputtered on a substrate from an Sc target material and an Al target material.</p>
申请公布号 JP2014236051(A) 申请公布日期 2014.12.15
申请号 JP20130115477 申请日期 2013.05.31
申请人 DENSO CORP;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 TESHIGAWARA AKIHIKO;KANO KAZUHIKO;AKIYAMA MORIHITO;NISHIKUBO KEIKO
分类号 H01L41/316;C23C14/06;H01L41/187 主分类号 H01L41/316
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