发明名称 |
METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR MANUFACTURING THE SAME, AND FILM-TYPE THERMISTOR SENSOR |
摘要 |
PROBLEM TO BE SOLVED: To provide: a highly reliable metal nitride material for a thermistor which can be shaped into a film or the like directly without a calcination process and has high heat resistance; a method for manufacturing the metal nitride material for a thermistor; and a film-type thermistor sensor.SOLUTION: A metal nitride material is used for a thermistor. The metal nitride material comprises a metal nitride expressed by the following general formula: VAlN(where 0.70≤y/(x+y)≤0.98; 0.4≤z≤0.5; and x+y+z=1), the crystal structure of which is a hexagonal wurtzite type single phase. A method for manufacturing the metal nitride material for a thermistor comprises a film formation step in which a film is formed by performing a reactive sputtering with a V-Al alloy sputtering target in an atmosphere containing nitrogen. |
申请公布号 |
JP2014236204(A) |
申请公布日期 |
2014.12.15 |
申请号 |
JP20130119164 |
申请日期 |
2013.06.05 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
FUJITA TOSHIAKI;TANAKA HIROSHI;NAGATOMO KENSHO |
分类号 |
H01C7/04;C01G31/00;C23C14/34;C30B29/38;C30B33/00;H01C17/12 |
主分类号 |
H01C7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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