DRY ETCHING METHOD, DRY ETCHING APPARATUS, METAL FILM AND DEVICE INCLUDING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a dry etching method by which the rate of etching a film of metal which forms a pentacoordinated or hexacoordinated complex structure with &bgr;-diketone can be increased.SOLUTION: A dry etching method comprises the step of etching a metal film formed on a substrate by use of an etching gas containing &bgr;-diketone. In the dry etching method, the metal film includes at least one kind of metal which forms a pentacoordinated or hexacoordinated complex structure with &bgr;-diketone. The etching gas containing &bgr;-diketone includes an additive agent consisting of at least one of HO and HO. The volume concentration of the additive agent is 1-20%.