发明名称 |
DOPED PROTECTION LAYER FOR CONTACT FORMATION |
摘要 |
Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate having a first doped region and a second doped region, and a gate stack formed on the semiconductor substrate. The semiconductor device also includes a main spacer layer formed on a sidewall of the gate stack. The semiconductor device further includes a protection layer formed between the main spacer layer and the semiconductor substrate, and the protection layer is doped with a tetravalent element. In addition, the semiconductor device includes an insulating layer formed on the semiconductor substrate and the gate stack, and a contact formed in the insulating layer. The contact has a first portion contacting the first doped region and has a second portion contacting the second doped region. The first region extends deeper into the semiconductor substrate than the second portion. |
申请公布号 |
KR20140143106(A) |
申请公布日期 |
2014.12.15 |
申请号 |
KR20140067679 |
申请日期 |
2014.06.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN MEI CHUN;HAO CHING CHEN;CHAN WEN HSIN;WANG CHAO JUI |
分类号 |
H01L29/78;H01L21/31;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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