发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor device manufacturing method, which can inhibit accumulation of cutting scraps of a solder layer in a recess and form a solder fillet having an intended shape.SOLUTION: A semiconductor device SD1 comprises: a lead L1 where a recess CP1 is formed across from under a tip surface to a rear face of the lead; a solder layer SDL2 formed at least on the rear face of the lead L1; and a solder layer SDL1 formed in the recess CP1, in which a thickness of the solder layer SDL1 in the recess CP1 is thicker than a thickness of the solder layer SDL2 on the rear face of the lead L1.</p>
申请公布号 JP2014236168(A) 申请公布日期 2014.12.15
申请号 JP20130118334 申请日期 2013.06.04
申请人 RENESAS ELECTRONICS CORP 发明人 ITO YOSHITO;SAITO MASARU
分类号 H01L23/50;H01L21/56 主分类号 H01L23/50
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