| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a susceptor having a structure in which a convex substrate mounting part where a crystal growth layer with a favorable crystal quality can be grown on a substrate is provided, in a vapor phase growth method in which crystal growth is performed on a substrate transparent to infrared rays through thermal decomposition reaction of organic metal material gas.SOLUTION: A susceptor 100 is used for a vapor phase growth device in which organic metal material gas and a substrate 5 transparent to infrared rays are used and the organic metal material gas is thermally decomposed to grow a crystal growth layer on the substrate 5. The susceptor 100 has a structure, where the susceptor includes a convex substrate mounting part 103 on which the substrate 5 can be mounted, the substrate mounting part 103 of the susceptor 100 is formed by bonding a skeleton part 101 having a surface at least in contact with the main surface of the substrate 5 and a frame part 102 surrounding a side surface of the substrate, the skeleton part 101 and the frame part 102 comprise a silicon carbide member, and sodium is contained in the vicinity including a bonding surface 104 bonding the skeleton part 101 and the frame part 102.</p> |
