| 摘要 |
<p>The present invention relates to a CMP slurry composition for polishing a silicon wafer, comprising deionized water, an abrasive, a water-soluble polymer, an acetic acid-based chelating agent, a phosphoric acid-based chelating agent, and a pH adjuster. The CMP slurry composition shows excellent polishing effect on a silicon wafer in the second polishing to polish mirror surfaces after the first polishing and has little defect after polishing the mirror surfaces.</p> |
