| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which is low loss and has a high withstand voltage.SOLUTION: A semiconductor device comprises: p type termination regions 11, 12 which are formed in an ntype drift layer 2 formed on a surface composed of a (0001) plane of an ntype substrate; a surface electrode 10 formed on the ntype drift layer 2; and a back electrode formed in contact with a rear face of the ntype substrate. A curvature radius Rof each corner part of the p type termination regions 11, 12 in a [-1-120] direction side from the center of a semiconductor chip SC is made larger than a curvature radius Rof each corner part of the p type termination regions 11, 12 in a [11-20] direction side from the center of the semiconductor chip SC.</p> |
